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For FET of n-chanel Idss current is maximum but i found it to be as minimum?

for FET in n-chanel i found that as i incresses the Vds of transistor  the depletion layer of the both pn junction increases .due to this less no. of electron crosses the channel.when both the depletion layer touches each other then Idd current will flow which is maximum possible current through the drain which is approximately equal to zero mA.but as tge depletion layer touches each other there pass very few electron .so as the less number of electron pass current must be minimum instead of maximum  

All bets are off if you exceed Vgs max, or Vds max